| abstract |
The invention provides a chemical mechanical polishing (CMP) composition, a method and a system for polishing cobalt or a cobalt-containing substrate. The CMP composition contains α-alanine, abrasive particles, phosphate, corrosion inhibitor, oxidant, and water. The cobalt chemical mechanical polishing composition provides a high Co removal rate and a very high Co film to dielectric film selectivity, where the dielectric film has such as TEOS, Si x N y (with 1.0 <x <3.0, 1.33 <y <4.0), low-k and ultra-low-k films. |