http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I701836-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_39094f1396998763fb81ce213ed520bd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate | 2019-07-26^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-08-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bbbf865dd3cefbf872a9f34aeffb58f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b557c725c32c11cd1503816fb37c9d6 |
| publicationDate | 2020-08-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I701836-B |
| titleOfInvention | Enhancement mode hemt device and method of manufacturing the same |
| abstract | An enhancement mode high electron mobility transistor (HEMT) device and a method of manufacturing the same are provided. The enhancement mode HEMT device includes a channel layer, a barrier layer, a depolarization layer, a low-temperature aluminum nitride (AlN) layer, and a p-type gallium nitride (GaN) layer, which are sequentially disposed on a substrate, and a gate, a source and a drain. The gate is disposed on the p-type GaN layer, and the source and the drain are disposed on the low-temperature AlN layer on both sides of the gate. |
| priorityDate | 2019-07-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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