http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I711160-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-063 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11524 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 |
| filingDate | 2019-02-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1018c89b44637ada8284c26c7fe859d |
| publicationDate | 2020-11-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I711160-B |
| titleOfInvention | Semiconductor device |
| abstract | The semiconductor device of the embodiment includes: a first insulating film wall that separates the same elliptical column region into two regions in the major axis direction of the ellipse; and a first memory film along the ellipse separated by the first insulating film wall The side wall surface of one of the column regions is arranged in a cylindrical shape and has a first charge storage film; a second memory film along the side of the other of the elliptical column regions separated by the first insulating film wall The wall surface is arranged in a cylindrical shape and has a second charge storage film; the first wiring group is provided with a plurality of layers in the length direction of the elliptical column region, each of which is plate-shaped and perpendicular to the length direction of the elliptical column region The second wiring group, which is equal to the same layer as the first wiring group, is provided with multiple layers, each of which is plate-shaped and parallel to the first wiring group and connected to the The length of the elliptical column region extends in a direction orthogonal to the longitudinal direction and is connected to the second memory film; the first channel film is arranged in a columnar shape along the inner wall surface of the first memory film; the second channel film, It is arranged in a columnar shape along the inner side wall surface of the second memory film; and a second insulating film wall formed integrally with the first insulating film wall, and the plurality of layers of the first wiring group and the plurality of layers of the second 2 Separation between wiring groups. |
| priorityDate | 2018-09-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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