| abstract |
Provided is a method for manufacturing a thin SiC wafer, which can thin the SiC wafer by a method that does not produce cracks, etc., and can omit the grinding after the thickness adjustment of the SiC wafer.nn n n n n In the manufacturing method of this thin SiC wafer (40), a thinning step is included, which is etched by heating the SiC wafer (40) cut from the ingot (4) under the Si vapor pressure The Si vapor pressure etching on the surface reduces the thickness to less than 100μm. |