| abstract |
A three-dimensional memory device includes a first alternating stack of first insulating layers and first electrically conductive layers, a first memory opening fill structure extending through the first alternating stack and including a first memory film and a first vertical semiconductor channel, a joint-level electrically conductive layer overlying the first alternating stack, at least one joint-level doped semiconductor portion contacting a top surface of the first vertical semiconductor channel and located within, and electrically isolated from, the joint-level electrically conductive layer, a second alternating stack of second insulating layers and second electrically conductive layers located over the joint-level electrically conductive layer, and a second memory opening fill structure extending through the second alternating stack and including a second memory film and a second vertical semiconductor channel that is laterally surrounded by the second memory film and vertically extends into the at least one joint-level doped semiconductor portion. |