| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2013-008 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-14 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2017-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5a22a8a9e4043e48cb989cce9544769
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9701c30459b2f5fe2ecfc5f71ab9f4c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd611807b7548b2480ab13624c6c27f |
| publicationDate |
2018-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10102905-B2 |
| titleOfInvention |
Memory cells having a plurality of resistance variable materials |
| abstract |
Resistance variable memory cells having a plurality of resistance variable materials and methods of operating and forming the same are described herein. As an example, a resistance variable memory cell can include a plurality of resistance variable materials located between a plug material and an electrode material. The resistance variable memory cell also includes a first conductive material that contacts the plug material and each of the plurality of resistance variable materials and a second conductive material that contacts the electrode material and each of the plurality of resistance variable materials. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10460798-B2 |
| priorityDate |
2012-08-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |