http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10162266-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d72711e97d894c55af805c9de2053ab |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2013-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5778d74bdb48cd3668e715e1786b0a14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e64ad8645410a694fdc772366a2226d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_156cd0ccfd8d84e45134f77d4f5933a4 |
| publicationDate | 2018-12-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10162266-B2 |
| titleOfInvention | Photoresist pattern trimming methods |
| abstract | Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11003074-B2 |
| priorityDate | 2012-12-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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