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filingDate 2018-02-08^^<http://www.w3.org/2001/XMLSchema#date>
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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb0ba0acac9dba764380365ec40ba39d
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publicationDate 2019-01-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10177251-B2
titleOfInvention Semiconductor device, inverter circuit, drive device, vehicle, and elevator
abstract A semiconductor device according to an embodiment includes a silicon carbide layer having a first plane and a second plane; a source electrode; a drain electrode; first and second gate electrodes located; an n-type drift region and a p-type body region; n-type first and second source regions; a p-type first silicon carbide region and p-type second silicon carbide region having a p-type impurity concentration higher than the body region; first and second gate insulating layers; a p-type third silicon carbide region contacting the first silicon carbide region, a first n-type portion being located between the first gate insulating layer and the third silicon carbide region; and a p-type fourth silicon carbide region contacting the second silicon carbide region, a second n-type portion being located between the second gate insulating layer and the fourth silicon carbide region.
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priorityDate 2017-05-22^^<http://www.w3.org/2001/XMLSchema#date>
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