| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-25 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2017-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f060647c92d01e4cd20e82e0164f9103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b23d1732956c4faa55ddb8bf87f310ae |
| publicationDate |
2019-02-26^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10217797-B2 |
| titleOfInvention |
Switching device, and resistive random access memory including the same as a selection device |
| abstract |
A switching device includes a first electrode, a switching layer having a non-memory characteristic, and a second electrode that are disposed over a substrate. The switching layer includes an oxide of a first atom or a nitride of the first atom, and a second atom is doped in the oxide or the nitride. The second atom forms a trap site trapping a conductive carrier in the switching layer when a voltage having an absolute value that is smaller than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. The second atom forms a moving path through which the conductive carrier moves between the first electrode and the second electrode when a voltage having an absolute value that is greater than an absolute value of a predetermined threshold voltage is applied between the first and the second electrodes. |
| priorityDate |
2015-12-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |