| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
| filingDate |
2017-09-15^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-04-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77a0feef0c3ce40b1d16074b9cec9025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a99461710665b8802ed02538fe8f0a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f0e7f822d025423143e7752655db99f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b3dd9b1d61f4c34c4472de2539c274 |
| publicationDate |
2019-04-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10262854-B2 |
| titleOfInvention |
Deposition of SiN |
| abstract |
Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020043799-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600530-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11587783-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023114641-A1 |
| priorityDate |
2014-09-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |