| abstract |
A gallium nitride-based sensor having a heater structure and a method of manufacturing the same are disclosed, the method including growing an n-type or p-type GaN layer on a substrate, growing a barrier layer on the n-type or p-type GaN layer, sequentially growing a u-GaN layer and a layer selected from among an AlxGa1-xN layer, an InxAl1-xN layer and an InxAlyGa1-x-yN layer on the barrier layer, patterning the n-type or p-type GaN layer to form an electrode, forming the electrode along the pattern formed on the n-type or p-type GaN layer, and forming a sensing material layer on the layer selected from among the AlxGa1-xN layer, the InxAl1-xN layer and the InxAlyGa1-x-yN layer, wherein a HEMT sensor or a Schottky diode sensor can be heated using an n-GaN (or p-GaN) layer, thus increasing the sensitivity of the sensor and reducing the restoration time. |