| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_716ced455c5edbe3e93066825dc8d4ef |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76819
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02244 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate |
2018-08-29^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-02-25^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_107d4e90620aff79ba3dcb0a2d6bd679
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3930f7c534b30091d5fb4986357dcb04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc85376a5946245a4a1bdf1ae9c9551e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_097f0241c929a26babdee2d20689734e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_beb7785c9972bce1411a7e73a4ee0d99
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf2bed0c890b5bcc453774a7c67c3071 |
| publicationDate |
2020-02-25^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10573555-B2 |
| titleOfInvention |
Methods of producing self-aligned grown via |
| abstract |
Methods and apparatus to form fully self-aligned vias are described. Portions of first conductive lines are recessed in a first insulating layer on a substrate. A first metal film is formed in the recessed portions of the first conductive lines and pillars are formed from the first metal film. A second insulating layer is deposited around the pillars. The pillars are removed to form vias in the second insulating layer. A third insulating layer is deposited in the vias and an overburden is formed on the second insulating layer. Portions of the overburden are selectively etched from the second insulating layer to expose the second insulating layer and the filled vias and leaving portions of the third insulating layer on the second insulating layer. The third insulating layer is etched from the filled vias to form a via opening to the first conductive line. |
| priorityDate |
2017-08-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |