| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89b170728e9b1de7f20c98f2fbc2a113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6813f68bbadbcaae3828aa035190fede |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2019-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-06-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc04c2b338975961a41d36f84b406c8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51cffe52979b96db83815c55fdb89197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_605e1921dbf6f782d3ed6d418d98feb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c162ae0ed5d5f4e01dd9adc4ee409ac6 |
| publicationDate |
2020-06-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10692730-B1 |
| titleOfInvention |
Silicon oxide selective dry etch process |
| abstract |
Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021041462-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11251050-B2 |
| priorityDate |
2019-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |