| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2c0e5e565c47c7932e1e0b89f6d73237 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-641
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02444
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02656 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-26 |
| filingDate |
2019-06-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-06-23^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59319b1e112568cbde2089a21b488af2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08e9bdf26e05f2e5cd561b9280e57210 |
| publicationDate |
2020-06-23^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10692752-B2 |
| titleOfInvention |
Gallium nitride semiconductor structure and process for fabricating thereof |
| abstract |
A semiconductor substrate structure and process for fabrication of the semiconductor substrate structure are described. The semiconductor substrate structure includes a silicon carbide (SiC) wafer substrate, an active gallium nitride (GaN) layer and a layer of microcrystalline diamond (MCD) layer disposed between the SiC wafer substrate and the GaN active layer. The MCD) layer is bonded to the SiC wafer substrate and to the GaN active layer. |
| priorityDate |
2017-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |