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filingDate 2018-12-24^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-07-07^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc76236be3af2ff159d9f39f4fa080a0
publicationDate 2020-07-07^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10707072-B2
titleOfInvention Semiconductor structure with etched fin structure
abstract Semiconductor structures are provided. The semiconductor structure includes a substrate and a first fin structure and a second fin structure formed over the substrate. The semiconductor structure further includes an isolation structure formed adjacent to the second fin structure and covering the first fin structure and a gate structure formed over the first fin structure and the second fin structure. In addition, the first fin structure is lower than the second fin structure, and the first fin structure has a curved top surface under the isolation structure.
priorityDate 2014-12-19^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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