| abstract |
An epitaxial growing device to increase the speed of epitaxial deposition comprises a cavity comprising a reaction chamber, a gas supply unit, a vacuum pumping unit, a first electrode, a second electrode, and a carbon nanotube structure. A gas supply unit and the vacuum pumping unit are connected to the reaction chamber, the first electrode, the second electrode, and the carbon nanotube structure being located in the reaction chamber. The carbon nanotube structure is electrically connected to the first electrode and the second electrode and suspended through the first electrode and the second electrode and is heatable in itself. A method for growing an epitaxial layer using such device is also provided. |