Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11519 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11582 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11519 |
filingDate |
2019-04-02^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eee5005f63c12029279bd73fb81df05a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4010be3eca83e3785ba7c308cd522c13 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db42e84e9ad709d13087dcdaa1c955da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_30237878e20dafaa0d7e065bd1105c3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2b4b766837f56a86637ee3d6a6506b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b962b2a1c1f367a360b379686b9063fa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_160658133541a81fe8838906a9451df1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1aee9e061b7fe08eab2f8853b2162ff3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b57efcfd26af58cb56d9384995b4d221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74558d15bcf3c3ee72ddf2c9a6ad4efe |
publicationDate |
2020-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10727242-B2 |
titleOfInvention |
Methods of forming an array of elevationally-extending strings of memory cells comprising a programmable charge storage transistor and arrays of elevationally-extending strings of memory cells comprising a programmable charge storage transistor |
abstract |
An array of elevationally-extending strings of memory cells, where the memory cells individually comprise a programmable charge storage transistor, comprises a substrate comprising a first region containing memory cells and a second region not containing memory cells laterally of the first region. The first region comprises vertically-alternating tiers of insulative material and control gate material. The second region comprises vertically-alternating tiers of different composition insulating materials laterally of the first region. A channel pillar comprising semiconductive channel material extends elevationally through multiple of the vertically-alternating tiers within the first region. Tunnel insulator, programmable charge storage material, and control gate blocking insulator are between the channel pillar and the control gate material of individual of the tiers of the control gate material within the first region. Conductive vias extend elevationally through the vertically-alternating tiers in the second region. An elevationally-extending wall is laterally between the first and second regions. The wall comprises the programmable charge storage material and the semiconductive channel material. Other embodiments and aspects, including method, are disclosed. |
priorityDate |
2016-08-09^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |