| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9d0431643a8821a088efdecd07080e8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02241
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2018-06-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f0fe6fa623ea6ee0e6a5df44990ecdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14f12f57ec2104c64c564c3199f50614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c705da761ae4b15a3cae27cbea9cb3dd |
| publicationDate |
2020-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10784104-B2 |
| titleOfInvention |
Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures |
| abstract |
Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample. |
| priorityDate |
2017-06-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |