| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_887e125008cf84c53554d9e68cf7f02b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-078 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0745
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-074 |
| filingDate |
2018-02-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f34fa929c9765ffb7bbab09ea9b5223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b4f04924b88fb75aa7d5f786d28c5ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_028d58bdde028ae21c637da9af888382 |
| publicationDate |
2020-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10811553-B2 |
| titleOfInvention |
Group-IV solar cell structure using group-IV or III-V heterostructures |
| abstract |
Device structures, apparatuses, and methods are disclosed for photovoltaic cells that may be a single-junction or multijunction solar cells, with at least a first layer comprising a group-IV semiconductor in which part of the cell comprises a second layer comprising a III-V semiconductor or group-IV semiconductor having a different composition than the group-IV semiconductor of the first layer, such that a heterostructure is formed between the first and second layers. |
| priorityDate |
2012-09-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |