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filingDate 2019-08-29^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-02-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10916420-B2
titleOfInvention Processing method and plasma processing apparatus
abstract A substrate processing method includes: providing a substrate in a processing container; selectively forming a first film on a surface of a substrate by plasma enhanced vapor deposition (PECVD); and forming a second film by atomic layer deposition (ALD) in a region of the substrate where the first film does not exist. The second film is formed by repeatedly performing a sequence including: forming a precursor layer on the surface of the substrate; purging an interior of the processing container after forming of the precursor; converting the precursor layer into the second film; and purging a space in the processing container after the converting. A plasma processing apparatus performing the method is also provided.
priorityDate 2018-06-07^^<http://www.w3.org/2001/XMLSchema#date>
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