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filingDate 2018-12-07^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-03-09^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da8e5f7279951e796b974189caeaa8a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66a6ce2e6eb75b3787918143026ee996
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publicationDate 2021-03-09^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10943873-B2
titleOfInvention Semiconductor device structure comprising a plurality of metal oxide fibers and method for forming the same
abstract A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a conductive structure over the substrate. The semiconductor device structure includes first metal oxide fibers over the conductive structure. The semiconductor device structure includes a dielectric layer over the substrate and covering the conductive structure and the first metal oxide fibers. The dielectric layer fills gaps between the first metal oxide fibers.
priorityDate 2015-12-16^^<http://www.w3.org/2001/XMLSchema#date>
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