http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10985051-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate | 2019-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc0d1860f1a16f0c0cbe521ccb909698 |
| publicationDate | 2021-04-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10985051-B2 |
| titleOfInvention | Semiconductor device with air spacer and method for forming the same |
| abstract | The present disclosure provides a semiconductor device and a method for forming the semiconductor device. The method includes forming a first conductive structure over a substrate, forming a first dielectric structure over the first conductive structure, transforming a sidewall portion of the first conductive structure into a first dielectric portion, removing the first dielectric portion such that a width of the first dielectric structure is greater than a width of a remaining portion of the first conductive structure, and forming an inter-layer dielectric (ILD) layer covering sidewalls of the first dielectric structure such that a first air spacer is formed between the ILD layer and the remaining portion of the first conductive structure. |
| priorityDate | 2019-07-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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