| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 |
| classificationCPCInventive |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76865
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
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| classificationIPCInventive |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
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| filingDate |
2019-11-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8c8f5bc33359c190521c74069ae1172
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b635a37b96b0fa6b288609997618e153 |
| publicationDate |
2021-06-22^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11043413-B2 |
| titleOfInvention |
Barrier layer formation for conductive feature |
| abstract |
Embodiments described herein relate generally to one or more methods for forming a barrier layer for a conductive feature in semiconductor processing. In some embodiments, an opening is formed through a dielectric layer to a conductive feature. A barrier layer is formed in the opening along a sidewall of the dielectric layer and on a surface of the conductive feature. Forming the barrier layer includes depositing a layer including using a precursor gas. The precursor gas has a first incubation time for deposition on the surface of the conductive feature and has a second incubation time for deposition on the sidewall of the dielectric layer. The first incubation time is greater than the second incubation time. A conductive fill material is formed in the opening and on the barrier layer. |
| priorityDate |
2018-05-31^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |