| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6813f68bbadbcaae3828aa035190fede
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89b170728e9b1de7f20c98f2fbc2a113 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0138 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate |
2019-07-17^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d75c961be148be8fcbf40c23dd7ef77e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a1e4e729af35917ef626517db58ba79 |
| publicationDate |
2021-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11049692-B2 |
| titleOfInvention |
Methods for tuning plasma potential using variable mode plasma chamber |
| abstract |
Plasma processing apparatus and associated methods are provided. In one example, a method can include admitting a process gas into a plasma chamber. The method can include exciting with RF energy an inductive coupling element to initiate ignition of a plasma induced in the process gas. The method can include adjusting an RF voltage of an electrostatic shield located between the inductive coupling element and the plasma chamber. The electrostatic shield can have a stray capacitance to a ground reference. The method can include conducting an ion-assisted etching process on the workpiece based at least in part on the RF voltage of the electrostatic shield. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189464-B2 |
| priorityDate |
2019-07-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |