| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66196 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-8605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2019-10-10^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd4f24995c655b00fbc4cbaea5e054c9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cbb92542b7771702e2dcc9d60e4684c |
| publicationDate |
2021-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11075196-B2 |
| titleOfInvention |
Integrated resistor for semiconductor device |
| abstract |
A heterostructure semiconductor device includes first and second active areas, each electrically isolated from one another, and each including first and second active layers with an electrical charge disposed therebetween. A power transistor is formed in the first active area, and an integrated gate resistor is formed in the second active area. A gate array laterally extends over the first active area of the power transistor. First and second ohmic contacts are respectively disposed at first and second lateral ends of the integrated gate resistor, the first and second ohmic contacts are electrically connected to the second portion of the second active layer, the second ohmic contact also being electrically connected to the gate array. A gate bus is electrically connected to the first ohmic contact. |
| priorityDate |
2016-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |