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filingDate 2020-04-01^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-11-30^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_171ed4e225626656e99d6035e5e9375c
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publicationDate 2021-11-30^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11189697-B2
titleOfInvention Ultra-thin fin structure and method of fabricating the same
abstract The present disclosure describes a method for forming ultra-thin fins with a tapered bottom profile for improved structural rigidity and gate control characteristics. The method includes forming a fin structure that includes an epitaxial layer portion and a doped region portion surrounded by an isolation region so that a top section of the epitaxial layer portion is above the isolation region. The method also includes depositing a silicon-based layer on the top portion of the epitaxial layer above the isolation region and annealing the silicon-based layer to reflow the silicon-based layer. The method further includes etching the silicon-based layer and the fin structure above the isolation region to form a first bottom tapered profile in the fin structure above the isolation region and annealing the fin structure to form a second bottom tapered profile below the first bottom tapered profile and above the isolation region.
priorityDate 2020-04-01^^<http://www.w3.org/2001/XMLSchema#date>
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