| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04L2209-12 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04L9-3278
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04L9-0866
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04L9-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22 |
| filingDate |
2020-03-24^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05f1f86d9fa7250567755f12c7d0d53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9077b08a8cf1e345b39793ea956a0c26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a89ae67cd2cf2f9a1c1bdcd5bbd547f0 |
| publicationDate |
2022-02-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11239414-B2 |
| titleOfInvention |
Physical unclonable function for MRAM structures |
| abstract |
An integrated circuit including a memory array and a physical unclonable function array is obtained by causing metal back sputtering in specific regions of the integrated circuit during ion beam etch. MRAM pillars within the memory array have larger widths than the underlying bottom electrodes while those within the physical unclonable function array have smaller widths than the underlying bottom electrodes. Metal residue deposited over tunnel barrier layers causes random electrical shorting of some of the MRAM pillars within the physical unclonable function array. |
| priorityDate |
2020-03-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |