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filingDate 2020-06-19^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-03-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11271020-B2
titleOfInvention Semiconductor device and method for manufacturing semiconductor device
abstract According to one embodiment, a semiconductor device includes an insulating substrate, a first semiconductor layer located above the insulating substrate, a second semiconductor layer located above the insulating substrate, an insulating layer which covers the first semiconductor layer and the second semiconductor layer, and includes a first contact hole reaching the first semiconductor layer and a second contact hole reaching the second semiconductor layer, a barrier layer which covers one of the first semiconductor layer inside the first contact hole and the second semiconductor layer inside the second contact hole, and a first conductive layer which is in contact with the barrier layer.
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