| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2020-09-02^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-04-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4777c43beabdef548f039fed05f243f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_648b7e03d52ce6e763b6d3b7cc55f924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8287fb7e36f68745866c96dc96833151
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f8566d99c5d5e8d27e499c2788dc72a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aeddbca69760f48c35418983bd11b078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe050dd76497a14721016bfd8b31236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_345f6e5a49ddc68bb66afabef07468ff |
| publicationDate |
2022-04-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11302691-B2 |
| titleOfInvention |
High voltage integration for HKMG technology |
| abstract |
The present disclosure relates to an integrated circuit (IC) and a method of formation. In some embodiments, a low voltage region and a high voltage region are integrated in a substrate. A low voltage transistor device is disposed in the low voltage region and comprises a low voltage gate electrode and a low voltage gate dielectric separating the low voltage gate electrode from the substrate. A first interlayer dielectric layer is disposed over the substrate surrounding the low voltage gate electrode and the low voltage gate dielectric. A high voltage transistor device is disposed in the high voltage region and comprises a high voltage gate electrode disposed on the first interlayer dielectric layer. |
| priorityDate |
2017-09-13^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |