| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-15 |
| filingDate |
2019-09-18^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_474c53eddab7e3a14385ae781908d69a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cf885d77aa96db8e39c40a37a79e387
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70bf0fa423f4bf14eda09646ecce8b44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_290ac6b34257a68be2307d4100672a5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc22e7a2b4e816e2f3a2d732c963624 |
| publicationDate |
2022-06-07^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11355626-B2 |
| titleOfInvention |
High electron mobility transistor |
| abstract |
An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode. |
| priorityDate |
2019-08-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |