Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8321a4d88d3c45cbb4a9ebf4e9c07ec4 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-18 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-562 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-18 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D7-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D3-16 |
filingDate |
2021-04-01^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2022-09-06^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a849446f76c5f2e0343e50988e2132f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5c6f326848fa2632c39fef62ec2e19e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebdcd9261d3b27416b64b714aa433a76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d2f52d4a78b8b42915b19543b644117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6fe0743d04c7300c750b9b150bae118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7180fbd8b34d5e1fc306938338bb56ca |
publicationDate |
2022-09-06^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-11434578-B2 |
titleOfInvention |
Cobalt filling of interconnects in microelectronics |
abstract |
Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features. |
priorityDate |
2015-06-30^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |