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filingDate 2021-04-01^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-09-06^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-09-06^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11434578-B2
titleOfInvention Cobalt filling of interconnects in microelectronics
abstract Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising sub-micron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.
priorityDate 2015-06-30^^<http://www.w3.org/2001/XMLSchema#date>
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