http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11462337-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d1bacc06f2553c831235e1e703fd0f2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21H1-06 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21H1-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 |
| filingDate | 2021-04-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-10-04^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0306203b8b4de9d57a231294c3896d4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc20dc360c5b84eb41176a8f2349aaea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d51b0db0ce6c507afc9a5bf0c280cf0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d6a4960ab9237949cd3dff4a8a5f2f9 |
| publicationDate | 2022-10-04^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-11462337-B2 |
| titleOfInvention | Series and/or parallel connected alpha, beta, and gamma voltaic cell devices |
| abstract | A device for producing electricity. The device includes a substrate having spaced apart first and second surfaces and doped a first dopant type, first semiconductor material layers disposed atop the first substrate surface and doped the first dopant type, and second semiconductor material layers disposed atop the first semiconductor material layers and doped a second dopant type. A first contact is in electrical contact with the second substrate surface or in electrical contact with one of the first semiconductor material layers. A beta particle source emits beta particles that penetrate into the semiconductor material layers; the beta particle source is proximate the uppermost layer of the second plurality of semiconductor material layers. A second contact is in electrical contact with one of the second plurality of semiconductor material layers. In one embodiment, bi-polar contacts (the first and second contacts) are co-located on each major face of the device. |
| priorityDate | 2016-05-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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