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filingDate 2019-12-18^^<http://www.w3.org/2001/XMLSchema#date>
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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93a21d514e9557fbb66a9ceffc6458bc
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publicationDate 2022-10-25^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11482414-B2
titleOfInvention Ultra-low temperature ALD to form high-quality Si-containing film
abstract Disclosed is a method for forming Si-containing films, such as SiN film, by PEALD using trisilylamine (TSA) at ultralow temperature, such as a temperature below 250° C.
priorityDate 2019-12-18^^<http://www.w3.org/2001/XMLSchema#date>
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