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filingDate 2021-03-04^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-11-08^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff44bc339f9a189cadff0b879a90e46d
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publicationDate 2022-11-08^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11495665-B2
titleOfInvention Semiconductor device, inverter circuit, drive device, vehicle, and elevator
abstract A semiconductor device of an embodiment includes: a first trench in a silicon carbide layer and extending in a first direction; a second trench and a third trench located in a second direction orthogonal to the first direction with respect to the first trench and adjacent to each other in the first direction, n type first silicon carbide region, p type second silicon carbide region on the first silicon carbide region, n type third silicon carbide region on the second silicon carbide region, p type fourth silicon carbide region between the first silicon carbide region and the second trench, and p type fifth silicon carbide region located between the first silicon carbide region and the third trench; a gate electrode in the first trench; a first electrode; and a second electrode. A part of the first silicon carbide region is located between the second trench and the third trench.
priorityDate 2020-07-09^^<http://www.w3.org/2001/XMLSchema#date>
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