| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_870e3b104c1dab17055e2674c6bedd54 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0928
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82385
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2021-04-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-12-27^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54d6ba1129ec217c3f9cc7c167cf687e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42ce413dec21fa1779774fd2e0212fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f89f4c4cf7548a9839720eebb1e7ecdb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdc0420a3693a5dd45894bc10bdd7302 |
| publicationDate |
2022-12-27^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11538923-B2 |
| titleOfInvention |
Method for etching back hard mask layer on tops of dummy polysilicon gates in gate last process |
| abstract |
A method for etching back a hard mask layer on top of dummy polysilicon gates in a gate last process comprises: step 1: forming a plurality of dummy gate structures; step 2: depositing a spin-on carbon (SOC) layer to fill the space regions between the sidewalls of the dummy gate structures to a level above the top surface of each of the plurality of dummy gate structures; step 3: performing a first etching-back to the spin-on carbon layer to remove the SOC layer outside the space regions and keep the SOC layer in the space regions below the top surfaces of each of dummy polysilicon gate; step 4: performing a second etching-back by using the remaining spin-on carbon layer as a mask to remove the hard mask layer and the sidewalls of the dummy polysilicon gates on both sides of the hard mask layer at the same time; step 5: removing the SOC layer. This technique saves one photomask and improves the process window. |
| priorityDate |
2020-09-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |