http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11557551-B2

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filingDate 2019-04-15^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2023-01-17^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7261d920841353f160855c9d637c9dae
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publicationDate 2023-01-17^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-11557551-B2
titleOfInvention Integrated circuit with a resistive material layer and a bipolar transistor, and production method of same
abstract An integrated circuit includes a resistive material layer formed on a substrate, a metal layer formed on the resistive material layer, a bipolar transistor formed on the substrate, and a resistive element formed on the substrate. The bipolar transistor includes, as a sub-layer, the metal layer formed in a first region, and also includes a collector layer formed on the sub-collector layer. The resistive element is constituted by the resistive material layer formed in a second region.
priorityDate 2018-04-23^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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