| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dab7f72151c90995ccee3d82b1d60c57 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12611 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02 |
| filingDate |
2001-07-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bfebd1a7c88cbc6cf940ba9140fd96b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d3f6b82728df98d902a86d6d81886ce |
| publicationDate |
2001-12-06^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2001049029-A1 |
| titleOfInvention |
Structure and method for controlling band offset and alignment at a crystalline oxide-on-semiconductor interface |
| abstract |
A crystalline oxide-on-semiconductor structure and a process for constructing the structure involves a substrate of silicon, germanium or a silicon-germanium alloy and an epitaxial thin film overlying the surface of the substrate wherein the thin film consists of a first epitaxial stratum of single atomic plane layers of an alkaline earth oxide designated generally as (AO) n and a second stratum of single unit cell layers of an oxide material designated as (A′BO 3 ) m so that the multilayer film arranged upon the substrate surface is designated (AO) n (A′BO 3 ) m wherein n is an integer repeat of single atomic plane layers of the alkaline earth oxide AO and m is an integer repeat of single unit cell layers of the A′BO 3 oxide material. Within the multilayer film, the values of n and m have been selected to provide the structure with a desired electrical structure at the substrate/thin film interface that can be optimized to control band offset and alignment. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004017398-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7671414-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7427538-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8173495-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011039377-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004031990-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109841525-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7875932-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008303116-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004017398-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010038717-A1 |
| priorityDate |
1999-04-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |