| abstract |
A process for the production of a thinned wafer, comprising bonding the circuit surface (surface A) of a semiconductor wafer (a) to a holding substrate (b) with an adhesive film (c), grinding and polishing the back surface (surface B) of the semiconductor wafer to thin the semiconductor wafer, carrying out the metallization of the back surface (surface B) and the like as required, and then separating the thinned wafer from the holding substrate (b), n wherein a thermoplastic resin film is used as the adhesive film (c) and the above bonding of the circuit surface (surface A) of the semiconductor wafer (a) to the holding substrate (b) is carried out at a bonding temperature selected from the range of from +10° C. to +120° C. of glass transition point of the thermoplastic resin film or the range of from −40° C. to +20° C. of melting point of the thermoplastic resin film. |