http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2003143789-A1

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filingDate 2002-01-14^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae5cca2ffb563e1e681724f240311da9
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publicationDate 2003-07-31^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2003143789-A1
titleOfInvention Method for eliminating polysilicon residue by tilted ion implantation with oxygen
abstract A method for eliminating polysilicon residue is provided by converting the polysilicon residue into silicon dioxide in two steps. A tilted ion implantation step is performed to implant oxygen ions into the polysilicon residue to rich oxygen containing of the polysilicon residue. An oxygen anneal step is subsequently performed to completely convert the rich oxygen containing polysilicon residue into silicon dioxide that can eliminate the conductivity of the polysilicon residue and prevent oxygen encroachment occurring.
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priorityDate 2002-01-14^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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