| abstract |
A microwave plasma processing apparatus is provided, which includes a microwave generator, a plasma promoter, a microwave plasma processing chamber, a vacuum gas-discharging chamber, and a loading elevator, wherein microwave produced from the microwave generator is gradually transformed into a desirable mode through the use of a microwave coupling resonator, and processing gas supplied by a gas supply system is evenly introduced via slantwise gas outlets of an annular gas distribution panel into the microwave processing chamber. The microwave is used to induce the processing gas to form a plasma sphere in the microwave plasma processing chamber; by reducing pressure in the microwave plasma processing chamber via the vacuum gas-discharging chamber, a vapor deposition process can be performed on a sample disposed on a sample holder of the loading elevator. |