| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2004-03-22^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d73fddeb26fc0eb13bbd594190fec5ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20bff001dee27104bc6fe42f2d5f9d93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_390ca0967680ebea61e2f5e3ffa8279e |
| publicationDate |
2004-09-09^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2004173572-A1 |
| titleOfInvention |
Method of plasma etching of high-K dielectric materials with high selectivity to underlying layers |
| abstract |
A method of etching high dielectric constant materials using halogen gas and reducing gas chemistry. An embodiment of the method is accomplished using a 20 to 300 sccm of chlorine and 2 to 200 sccm of carbon monoxide, regulated to a total chamber pressure of 2-100 mTorr to etch a hafnium oxide layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7431795-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005215062-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7354866-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007026547-A1 |
| priorityDate |
2002-03-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |