| abstract |
A method for generating an oxide layer on a substrate such as a silicon wafer used for the manufacturing of microchips. The substrate is placed in an oven and an oxidising medium comprising oxygen is fed to the oven. To control the growth of the oxide layer the oxygen partial pressure in the exhaust is determined and, depending on the measured value, the feed of the components of the oxidising mediums are adjusted, so that the oxygen partial pressure in the oxygen gases is kept constant. The method allows the reproducible formation of oxide layers with a defined layer thickness. |