http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004224447-A1

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filingDate 2004-04-23^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f63903890cc74944e6fd5acae99e95a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acb0d8b39b8175a3787579d04ecc3abe
publicationDate 2004-11-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2004224447-A1
titleOfInvention Multi-pattern shadow mask laser annealing system
abstract A multi-pattern shadow mask, shadow mask laser annealing system, and a multi-pattern shadow mask method for laser annealing are provided. The method comprises: supplying a silicon substrate; supplying a multi-pattern shadow mask with a plurality of aperture patterns; creating substrate alignment marks; with respect to the alignment marks, laser annealing a substrate region in a plurality of aperture patterns; forming a corresponding plurality of polysilicon regions; and, forming a corresponding plurality of transistor channel regions in the plurality of polysilicon regions. Typically, the shadow mask includes a plurality of sections, with each section having at least one aperture pattern. A shadow mask section can be selected to create a corresponding aperture pattern. If the mask section includes a plurality of aperture patterns, the selection of a section creates all the corresponding aperture patterns in the selected section.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013191863-A1
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priorityDate 2002-04-17^^<http://www.w3.org/2001/XMLSchema#date>
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