| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a6c760472ee4c29e9cd26152ace2eb0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 |
| filingDate |
2003-07-16^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5382e287afe34066992527cba1b14a57
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_585336980140a4b580178b88efcc9f71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_999c7b768b0de454f7826b7095ccdb85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c173beab7da4ee3a76d53501fd4466b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca5a5ec2a4811b098bdf2bbbd4570f9a |
| publicationDate |
2005-01-20^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005014296-A1 |
| titleOfInvention |
Mocvd of tio2 thin film for use as feram h2 passivation layer |
| abstract |
A method of forming an H 2 passivation layer in an FeRAM includes preparing a silicon substrate; depositing a layer of TiO x thin film, where 0<x<2, on a damascene structure; plasma space etching of the Ti or TiO x thin film to form a TiO x sidewall; annealing the TiO x side wall thin film to form a TiO 2 thin film; depositing a layer of ferroelectric material; and metallizing the structure to form a FeRAM. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103928299-A |
| priorityDate |
2003-07-16^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |