| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2005-02-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ff0b75a3f477565f975f00afa4afd5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d511d796256e8d89e08a1bb9eb6eacc7 |
| publicationDate |
2005-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005179096-A1 |
| titleOfInvention |
Complimentary nitride transistors vertical and common drain |
| abstract |
A semiconductor device and a method for manufacturing the device are disclosed in which the semiconductor device includes ohmic contacts on different planes and the method for manufacturing the device includes etching a semiconductor stack of different conductivity semiconductor layers in successive steps to create a first opening of a first width in a first semiconductor layer to expose another semiconductor layer, and then a second opening of a narrower width in the another layer, whereby a portion of the another layer remains exposed for receiving an ohmic contact. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9559012-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017039635-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008078604-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102014107894-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013032906-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9331061-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10411098-B2 |
| priorityDate |
2004-02-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |