| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e19ca6ab4a976b9c49c721b4a7def5f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_905c585a5b11db11c130ef8f5d9a8376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2e68070ecd185ab24b44ce991875291a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c983dd4e16a2f93422711ec3f6d4e28e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2004-03-24^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e17de1224299406ec92516a9188ca70c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa8fd1bb2033dd12fb67d8888dbe2a2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23dabfcbf7d32b308963dcac855b94cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b5959265b30b05e8e7ef5caaaf17bd62 |
| publicationDate |
2005-09-29^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2005215039-A1 |
| titleOfInvention |
Method and apparatus for self-aligned MOS patterning |
| abstract |
A method of forming a thin film stack on a substrate, wherein the thin film stack includes at least a polysilicon layer and an oxide layer; forming a hardmask layer on the thin film stack; forming an anti-reflective coating (ARC) layer on the hardmask layer; patterning the ARC layer; etching the hardmask layer using the patterned ARC layer as a mask; and etching the thin film stack using the hardmask layer as a mask. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005164478-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007154849-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10229918-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7829262-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8273647-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8426118-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8609324-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108074808-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10515801-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109524300-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7354847-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8071467-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9865473-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007049035-A1 |
| priorityDate |
2004-03-24^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |