| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-312 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76289
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-01 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
2005-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd048eda0f99bdec917c707906a5b03c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0511513b4e08cb4ac462269b78d3b6b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81df6fa0d4a7ee2946cd82e1925e5d7 |
| publicationDate |
2006-01-12^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006006442-A1 |
| titleOfInvention |
Process for making a silicon-on-insulator ledge and structures achieved thereby |
| abstract |
A process of making a partial silicon-on-insulator ledge is disclosed. A deep implantation region is created in a substrate. During a lateral cavity etch, the deep implantation region resists etching. The lateral cavity etch acts to partially isolate an active area above the deep implantation region. The deep implantation region is formed at various process stages according to embodiments. An active device is also disclosed that is achieved by the process. A system is also disclosed that uses the active device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7445973-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8344436-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008079053-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006292766-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006292767-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2237315-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7605443-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005176222-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8530288-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8669603-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004238889-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7332790-B2 |
| priorityDate |
2002-04-08^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |