| abstract |
A metal-containing pattern structure is formed on a semiconductor substrate, and a cleaning composition is applied to the semiconductor substrate. The cleaning composition includes, based on a total weight of the cleaning composition, about 78 wt % to about 99.98 wt % of an acidic aqueous solution, about 0.01 wt % to about 11 wt % of a first chelating agent, and about 0.01 wt % to about 11 wt % of a second chelating agent. The metal-containing pattern structure includes an exposed first surface portion and a second surface portion covered with a polymer. Application of the cleaning solution forms a first corrosion-inhibition layer on the first surface portion of the metal-containing pattern structure, and removes the polymer from the second surface portion of the metal-containing pattern structure. |