| abstract |
A method of providing a layer in a semiconductor device, wherein the layer includes Si 1-x-y Ge x C y , and wherein the carbon in the layer is in a stable condition, includes preparing a silicon substrate; preparing a SiGeC precursor; forming a Si 1-x-y Ge x C y layer on the silicon substrate from the precursor; forming a top silicon layer on the Si 1-x-y Ge x C y layer; and completing the semiconductor device. |