| abstract |
A dual-gate thin film transistor (DG-TFT) and associated fabrication method are provided. The method comprises: forming a first (back) gate in a first horizontal plane; forming source/drain (S/D) regions and an intervening channel region in a second horizontal plane, overlying the first plane; and, forming a second (top) gate in a third horizontal plane, overlying the second plane. The S/D regions and intervening channel region have a combined length, smaller than the length of the first gate. A substrate insulating layer is formed over the substrate, made from a material such as SiO2. A first gate insulation layer is formed over the first gate. Amorphous silicon (a-Si) is deposited over the first gate insulation layer and crystallized. The S/D and channel regions are formed from the crystallized Si layer. A second gate oxide layer is formed over the channel region. |